کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5459825 | 1516189 | 2017 | 23 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of electric field on the electronic structures of MoS2/arsenene van der Waals heterostructure
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
Electronic structures modulation in MoS2/arsenene van der Waals (vdW) heterostructure with an external electric field (Eext) are investigated by density functional theory (DFT). It is demonstrated that the MoS2/arsenene heterobilayer is a type-II vdW heterostructure, and therefore electrons and holes are spatially separated. The band gap of MoS2/arsenene is significantly modulated by Eext, eventually a transition from semiconductor to metal occurs. The positive and negative Eext have different effects on the band gap due to the spontaneous electric polarization in MoS2/arsenene heterostructure. The variation of band edges as a function of Eext provides further insight to the linear variation of the band gap. Furthermore, the MoS2/arsenene vdW heterostructure experiences transitions from type-II to type-I and then to type-II under various external electric fields. The Eext can control not only the amount of charge transfer but also the direction of charge transfer at the MoS2/arsenene interface. The present study would open a new avenue for application of ultrathin MoS2/arsenene heterojuction in future nano- and optoelectronics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 705, 25 May 2017, Pages 486-491
Journal: Journal of Alloys and Compounds - Volume 705, 25 May 2017, Pages 486-491
نویسندگان
Wei Li, Tianxing Wang, Xianqi Dai, Yaqiang Ma, Yanan Tang,