کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5459839 | 1516189 | 2017 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of ZnO buffer layer on the electrical, optical and surface properties of Ga-doped ZnO films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The influence of the ZnO buffer layer thickness on the structural, electrical, optical and surface properties of Ga-doped ZnO (GZO) films deposited on glass substrates by RF magnetron sputtering were investigated. X-ray diffraction results showed the obtained films had highly c-axis oriented with hexagonal (002) structures and GZO film with 20 nm buffer layer had the best crystalline quality. The resistivity in GZO/ZnO bi-layer films decreased significantly than that in GZO film without a ZnO buffer layer, and GZO film with 20 nm buffer layer showed the lowest resistivity of 4.09 Ã 10â4 Ω cm. The bi-layer films exhibited the highest transmittance of over 80% in the visible light range and displayed a low near infrared transmittance. The correlation between surface morphology and wettability was studied and GZO/ZnO bi-layer films exhibited hydrophobic property with contact angle of θ from 104° to 108.5°, indicating acceptable property of environmental durability.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 705, 25 May 2017, Pages 598-601
Journal: Journal of Alloys and Compounds - Volume 705, 25 May 2017, Pages 598-601
نویسندگان
Hui Cheng, Hong Deng, Yan Wang, Min Wei,