کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5459839 1516189 2017 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influence of ZnO buffer layer on the electrical, optical and surface properties of Ga-doped ZnO films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
Influence of ZnO buffer layer on the electrical, optical and surface properties of Ga-doped ZnO films
چکیده انگلیسی
The influence of the ZnO buffer layer thickness on the structural, electrical, optical and surface properties of Ga-doped ZnO (GZO) films deposited on glass substrates by RF magnetron sputtering were investigated. X-ray diffraction results showed the obtained films had highly c-axis oriented with hexagonal (002) structures and GZO film with 20 nm buffer layer had the best crystalline quality. The resistivity in GZO/ZnO bi-layer films decreased significantly than that in GZO film without a ZnO buffer layer, and GZO film with 20 nm buffer layer showed the lowest resistivity of 4.09 × 10−4 Ω cm. The bi-layer films exhibited the highest transmittance of over 80% in the visible light range and displayed a low near infrared transmittance. The correlation between surface morphology and wettability was studied and GZO/ZnO bi-layer films exhibited hydrophobic property with contact angle of θ from 104° to 108.5°, indicating acceptable property of environmental durability.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 705, 25 May 2017, Pages 598-601
نویسندگان
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