کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5460742 | 1516172 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Bipolar resistive switching in PVDF and Graphene Oxide hetero-structure thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
Resistive switching behavior in Graphene oxide (GO) is well studied, however, the various mechanisms responsible for this phenomenon are still under extensive debate. We present repeatable bipolar resistive switching in GO thin films sandwiched between two insulating polymer PVDF (Polyvinylidene Fluoride) grown on conducting indium tin oxide (ITO) covered glass substrate. The device heterostructure (Al/PVDF/GO/PVDF/ITO) showed bipolar resistance states switching between low resistance state (LRS) to high resistance state (HRS) with a large ON/OFF ratio of 103 and resistance retention potential up to 104Â s. In LRS, in the low applied voltage region, ohmic conduction was the main reason for current conduction in devices; however, traps filled/assisted conduction mechanism dominates in the higher voltage region. The PVDF/GO/PVDF heterostructure shows that oxygen vacancies are responsible for the formation of current conducting filaments. The low operating voltage (<3Â V) and long-term stability of resistance states make it a promising candidate for possible applications as Resistive Random Access Memory (ReRAM) elements.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 722, 25 October 2017, Pages 579-584
Journal: Journal of Alloys and Compounds - Volume 722, 25 October 2017, Pages 579-584
نویسندگان
Atul Thakre, Ashok Kumar,