Temperature dependence of capacitance-voltage characteristics for GeTe2 thin films

We report the results of the crystallization behaviour, phase change and structure of GeTe2 thin films to ascertain the role of the capacitance behaviour. In this regard, capacitance-voltage characteristics were performed to know the effects of bias voltage, temperature and frequency on the observed variation in capacitance. The variation of capacitance in GeTe2 thin films has been explained in terms of electrons tunneling through the barrier in the quantum wells. The amorphous-crystalline phase transition has been found at a temperature of 350 K. Moreover, the structural change with temperature is discussed in terms of movement of Ge atoms from tetrahedral sites in the amorphous state to octahedral sites in the crystalline state.