| کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن | 
|---|---|---|---|---|
| 5461498 | 1516202 | 2017 | 6 صفحه PDF | دانلود رایگان | 
عنوان انگلیسی مقاله ISI
												Effects of annealing on the magnetic properties and microstructures of Ta/Mo/CoFeB/MgO/Ta films
												
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																																												کلمات کلیدی
												
											موضوعات مرتبط
												
													مهندسی و علوم پایه
													مهندسی مواد
													فلزات و آلیاژها
												
											پیش نمایش صفحه اول مقاله
												 
												چکیده انگلیسی
												We report a study on the evolution of perpendicular magnetic anisotropy (PMA) in Ta/Mo/CoFeB/MgO/Ta junctions annealed at 350 °C for different periods of time. The PMA quickly developed after a short annealing time followed by a slow approach to saturation. This evolution of PMA was accompanied by structural changes. The surface roughness (Rq) gradually increased with increasing annealing time to 30 min; further increases in annealing time resulted in a dramatic increase in Rq. The effects of film composition and chemical state on magnetic anisotropy in the as-deposited Ta/Mo/CoFeB/MgO/Ta films and annealed films were studied. The X-ray photoelectron spectroscopy results demonstrated that more Fe oxides were formed at the CoFeB/MgO interface after 1 min of annealing compared to in the as-deposited sample, which is critical to obtain the PMA. High-resolution transmission electron microscopy analysis revealed that the CoFeB and MgO layers are predominantly amorphous in sample as-deposited and after 1min annealing. However, the CoFeB and MgO layers are crystallized in sample after 30 and 60 min annealing, which is beneficial to get high PMA.
											ناشر
												Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 692, 25 January 2017, Pages 243-248
											Journal: Journal of Alloys and Compounds - Volume 692, 25 January 2017, Pages 243-248
نویسندگان
												Minghua Li, Hui Shi, Guoqiang Yu, Jinhui Lu, Xi Chen, Gang Han, Guanghua Yu, Pedram Khalili Amiri, Kang L. Wang,