Synthesis and characterization of ZnSxSe1-x films using Brush plating technique

ZnSxSe1-x films possess several interesting properties making them suitable for use in optoelectronic and optical applications. In this investigation, thin ZnSxSe1-x films were deposited for the first time by the brush plating technique. Thin films of ZnSxSe1-x were deposited at a constant current density of 80 mA cm-2 on titanium and conducting glass substrates at different temperatures in the range of 30 - 80°C. The precursors used were AR grade ZnSO4, sodium thiosulphate and sodium selenosulphate. XRD patterns of the films of different composition deposited at different temperatures exhibited hexagonal structure. An absorption coefficient of 104 cm-1 was observed. Extrapolation of the linear region to the hν axis yields the band gap in the range of 2.64 - 3.58 eV for the films deposited at different temperatures. EDAX study indicated that the composition of the films obtained were nearly equal to the composition of the precursors taken for deposition. X-ray photoelectron spectroscopy studies on the films of different composition deposited at 80°C. showed the spectra of Zn (2p), Se (3p1/2 and 3p3/2) and S (2p) levels. Atomic force microscope studies indicated that the surface roughness of the films increase from 1.04 - 5.45 nm as the ZnSe concentration increased. The grain size increases from 15 nm - 40 nm as the concentration of ZnSe increased.