Chemical spray deposition technique of antimony (Sb) doped polycrystalline MnIn2S4 thin films: Preparation and characterization

The Sb-doped Manganese Indium Sulphide (MnIn2S4) films were deposited on glass substrates using spray pyrolysis technique. The thin films were grown at various substrate temperatures ranging from 250 to 400 °C with a constant spray time (5 mins). The structural, morphological, optical and electrical properties of the thin films were investigated through different techniques such as X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), Electron diffraction spectroscopy (EDS), and UV-vis spectroscopy. The XRD studies reveal that the Sb-doped MnIn2S4 films were polycrystalline in nature with a cubic spinal structure having (2 2 0) plane as the preferred orientation. The EDS spectrum predicts the presence of Mn, In, Sb and S in the film grown at a substrate temperature of 250 °C. The FE-SEM photographs indicate the modification in the surface morphology of the films with an increase of substrate temperatures. From the optical studies, it is noted that, the band gap energy increases (1.85-2.75 eV) with an increase of substrate temperature (250-400 °C). These results reveal that the Sb-doped MnIn2S4 thin film prepared by spray pyrolysis technique is a promising candidate for photovoltaic applications.