A large-scale parametric study of InP deposition on patterned substrates

Selective Area Epitaxy (SAE) is the process of locally depositing a semiconductor film on a substrate which has been patterned with an inert masking material such as SiO2. During deposition by metalorganic chemical vapor deposition (MOCVD), the build up of precursors over the SiO2 mask causes material to diffuse into the open areas leading to a growth rate increase. SAE is an important technique for electronic and photonic device fabrication, and for the monolithic integration of these devices. The present work is a single comprehensive study, which reports on the impact of all major MOCVD parameters to SAE indium phosphide films. The parameters include pressure, V/III pressure ratio, growth rate, temperature and mask geometry.