کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489044 | 1524349 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth and properties of wide bandgap (MgSe)n(ZnxCd1âxSe)m short-period superlattices
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
We report the molecular beam epitaxy (MBE) growth and properties of (MgSe)n(ZnxCd1âx Se)m short-period superlattices(SPSLs) for potential application in II-VI devices grown on InP substrates. SPSL structures up to 1â¯Âµm thick with effective bandgaps ranging from 2.6â¯eV to above 3.42â¯eV are grown and characterized, extending the typical range possible for the ZnxCdyMg1âxâySe random alloy beyond 3.2â¯eV. Additionally, ZnxCd1âxSe single and multiple quantum well structures using the SPSL barriers are also grown and investigated. The structures are characterized utilizing reflection high-energy electron diffraction, X-ray reflectance, X-ray diffraction and photoluminescence. We observed layer-by-layer growth and smoother interfaces in the QWs grown with SPSL when compared to the ZnxCdyMg1âxâySe random alloy. The results indicate that this materials platform is a good candidate to replace the random alloy in wide bandgap device applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 480, 15 December 2017, Pages 74-77
Journal: Journal of Crystal Growth - Volume 480, 15 December 2017, Pages 74-77
نویسندگان
Thor A. Garcia, Maria C. Tamargo,