کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5489088 1524351 2017 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
MOVPE growth of violet GaN LEDs on β-Ga2O3 substrates
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
MOVPE growth of violet GaN LEDs on β-Ga2O3 substrates
چکیده انگلیسی
We report that a H2-free atmosphere is essential for the initial stage of metalorganic vapour phase epitaxy (MOVPE) growth of GaN on β-Ga2O3 to prevent the surface from damage. A simple growth method is proposed that can easily transfer established GaN growth recipes from sapphire to β-Ga2O3 with both (−2 0 1) and (1 0 0) orientations. This method features a thin AlN nucleation layer grown below 900 °C in N2 atmosphere to protect the surface of β-Ga2O3 from deterioration during further growth under the H2 atmosphere. Based on this, we demonstrate working violet vertical light emitting diodes (VLEDs) on n-conductive β-Ga2O3 substrates.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 478, 15 November 2017, Pages 212-215
نویسندگان
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