کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489128 | 1524353 | 2017 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study on the effect of film formation process and deposition rate on the orientation of the CsI:Tl thin film
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Although many new scintillation materials are developed, CsI:Tl is still prevailing because of its high scintillation efficiency. In this work, CsI:Tl thin films were fabricated by vacuum thermal evaporative deposition method and their morphology properties and growth orientation were observed by SEM and XRD. Photoluminescent spectra were used to measure the luminescent properties of the CsI:Tl thin film. The results show us the film formation process of CsI:Tl thin film and analyze the effect of film formation process and the deposition rate on the orientation of the CsI:Tl thin film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 476, 15 October 2017, Pages 64-68
Journal: Journal of Crystal Growth - Volume 476, 15 October 2017, Pages 64-68
نویسندگان
Xiaochuan Tan, Shuang Liu, Yijun Xie, Lina Guo, Shijun Ma, Tianyu Wang, Yong Liu, Zhiyong Zhong,