کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489177 | 1524352 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
CdTe/Zn(Mg)(Se)Te quantum dots for single photon emitters grown by MBE
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We report on pseudomorphic MBE growth of CdTe/Zn(Mg)(Se)Te quantum dot (QD) structures on InAs(100) substrates and studies of their structural and optical properties. The QDs were fabricated by using a thermal activation technique comprising deposition of a strained CdTe 2D layer, covering it with amorphous Te, followed by fast thermal desorption of the Te layer, which results in a 2D-3D RHEED pattern transition. The QDs exhibit the surface density as low as ~1010 cmâ2. The influence of MBE growth parameters and the structure design on photoluminescence properties of the QDs are discussed. Single QD photoluminescence was observed at T=8 K from the 200-nm-wide mesa-structures made of the CdTe QD structures, and the antibunching effect with g(2)(0)=0.16±0.04 was demonstrated. The peculiarities of MBE growth of ZnTe/MgTe/MgSe short-period superlattices nearly lattice-matched to InAs, which could serve as wide gap barriers for efficient electron and hole confinement in the CdTe/Zn(Mg)(Se)Te QDs, are also described.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 477, 1 November 2017, Pages 127-130
Journal: Journal of Crystal Growth - Volume 477, 1 November 2017, Pages 127-130
نویسندگان
S.V. Sorokin, I.V. Sedova, S.V. Gronin, G.V. Klimko, K.G. Belyaev, M.V. Rakhlin, I.S. Mukhin, A.A. Toropov, S.V. Ivanov,