کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5489186 1524352 2017 20 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Epitaxial growth of rocksalt Zn1−xMgxO on MgO (100) substrate by molecular beam epitaxy
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Epitaxial growth of rocksalt Zn1−xMgxO on MgO (100) substrate by molecular beam epitaxy
چکیده انگلیسی
Zn1−xMgxO films with x=0.22-0.87 were grown on MgO (100) substrates by molecular beam epitaxy at 400 and 600 °C respectively. The films containing 85% or less ZnO grow epitaxially and retain entirely the rocksalt (rs) crystal structure. The rs-Zn1−xMgxO epilayers have a tunable bandgap energy of 4.5-6.2 eV. In addition, the rs-Zn1−xMgxO epilayer grown at 600 °C exhibits a lower FWHM value of its (200) rocking curve as compared to its low- temperature counterpart. The lattice constant of rs-ZnO at ambient pressure and temperature is obtained to be 4.2766 Å. The sticking coefficient of Mg atoms on rs-ZMO is approximately four times higher than that of ZnO atoms regardless of the growth temperature in the range of 400-600 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 477, 1 November 2017, Pages 169-173
نویسندگان
, , , , ,