کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489206 | 1524352 | 2017 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical properties of InxGa1âxN/GaN quantum-disks obtained by selective area sublimation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Optical properties of InxGa1âxN/GaN quantum-disks obtained by selective area sublimation Optical properties of InxGa1âxN/GaN quantum-disks obtained by selective area sublimation](/preview/png/5489206.png)
چکیده انگلیسی
We study the cathodoluminescence (CL) and the photoluminescence (PL) properties of InxGa1âxN/GaN quantum disks (QDisks) included in nanowires obtained by selective area sublimation from an InxGa1âxN/GaN multiple quantum well using an in situ SixNy nanomasking performed in a molecular beam epitaxy reactor. The NW density can be adjusted as a function of the SixNy coverage. The mean NW diameter is found almost constant for NW density varying by two orders of magnitude. The light emission from the InxGa1âxN/GaN QDisks is blue-shifted compared to the quantum wells. The origin of this shift is discussed in terms of strain and lateral confinement effects in the QDisks. The CL and PL spectra reveal strongly reduced peak linewidths for experiments conducted on a few or single objects isolated by using sub-micrometer apertures in a metallic mask.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 477, 1 November 2017, Pages 262-266
Journal: Journal of Crystal Growth - Volume 477, 1 November 2017, Pages 262-266
نویسندگان
B. Damilano, S. Vézian, M. Portail, B. Alloing, J. Brault, A. Courville, V. Brändli, M. Leroux, J. Massies,