Spinodal decomposition regions of InxGa1-xSbyAszN1-y-z, InxGa1-xSbyPzN1-y-z and InxGa1-xAsyPzN1-y-z alloys

Considerable interest in highly mismatched semiconductor alloys as materials for device applications has recently been shown. However, the spinodal instability can be a serious obstacle to their use. Here, the spinodal decomposition regions of dilute nitride InxGa1-xSbyAszN1-y-z, InxGa1-xSbyPzN1-y-z and InxGa1-xAsyPzN1-y-z quinary alloys lattice matched to III-V compounds are studied from 0 °C to 1000 °C. The alloys contain six types of chemical bonds corresponding to the constituent compounds, and rearrangement of atoms changes the bonds between them. Therefore, a size and location of the spinodal decomposition regions depend on the enthalpies of constituent compounds, internal strain energy, coherency strain energy and entropy. Among the considered alloys, InxGa1-xSbyAszN1-y-z lattice matched to InAs, InxGa1-xSbyPzN1-y-z lattice matched to GaP and InP and InxGa1-xAsyPzN1-y-z lattice matched to GaAs and InP are most suitable for device applications.