کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489435 | 1524365 | 2017 | 41 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Surface kinetics study of metal-organic vapor phase epitaxy of GaAs1âyBiy on offcut and mesa-patterned GaAs substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Surface kinetics study of metal-organic vapor phase epitaxy of GaAs1âyBiy on offcut and mesa-patterned GaAs substrates Surface kinetics study of metal-organic vapor phase epitaxy of GaAs1âyBiy on offcut and mesa-patterned GaAs substrates](/preview/png/5489435.png)
چکیده انگلیسی
The influence of the surface step termination on the metal-organic vapor phase epitaxy of GaAs1âyBiy was explored by examining the epitaxial layer growth rate, composition, and morphology characteristics on the offcut and mesa-patterned (001) GaAs substrates. Vicinal surfaces offcut to (111)B with a high density of As-terminated steps ('B-steps') increased the GaAs1âyBiy layer growth rate as well as possessed the fastest lateral growth rate on mesa-patterned substrates at a growth temperature of 420 °C, indicating that B-steps enhanced the Ga incorporation. With Bi accumulation on the surface, the Ga incorporation rate was reduced by the Bi preferential presence at B-steps blocking the Ga incorporation. Vicinal surfaces offcut to (111)A, which generated Ga-terminated steps ('A-steps') enhanced the Bi incorporation rate during growth at 380 °C. This work reveals that the surface step termination plays an important role in the growth of the metastable alloy. Appropriate choices of both the substrate surface-step structure and other growth parameters could lead to an enhanced Bi incorporation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 464, 15 April 2017, Pages 39-48
Journal: Journal of Crystal Growth - Volume 464, 15 April 2017, Pages 39-48
نویسندگان
Yingxin Guan, Kamran Forghani, Honghyuk Kim, Susan E. Babcock, Luke J. Mawst, Thomas F. Kuech,