کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5489456 1524365 2017 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
AlGaN HEMTs on patterned resistive/conductive SiC templates
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
AlGaN HEMTs on patterned resistive/conductive SiC templates
چکیده انگلیسی
High performance GaN-based high electron mobility transistors (HEMTs) on SiC require low-miscut (~0.45°), resistive substrates, which are very expensive. A cost-effective solution is to use resistive SiC template i.e., grow a thick resistive SiC epitaxial layer on cheap, conductive SiC substrate. However, this approach requires much higher miscut (2-8°). In the present work we show a lateral patterning technology capable to locally decrease the high miscut of the resistive SiC template, down to a level acceptable for GaN epitaxy. On such patterned SiC templates we grew smooth AlGaN/GaN structures. The maximum width of flat regions available for device fabrication was nearly 100 µm. In these flat regions AlGaN-based HEMTs were fabricated and characterized.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 464, 15 April 2017, Pages 159-163
نویسندگان
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