کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489499 | 1524362 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Theoretical study on critical thickness of heteroepitaxial h-BN on hexagonal crystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
Hexagonal crystals are suitable underlayer candidates for hexagonal boron nitride (h-BN) heteroepitaxy due to their similar in-plane atomic arrangement. When the thickness of h-BN is beyond a critical value, its accumulated stress resulting from the lattice mismatch can be relaxed by generating dislocation or changing into three-dimensional growth. Here we calculate the evolution of h-BN critical thickness with the growth temperature when it is grown on various frequently-used hexagonal crystals for both cases. The results show that in order to minimize the lattice mismatch, a low growth temperature is preferred when grown on GaN or Si(1 1 1) while on the contrary when grown on 6H-SiC or α-Al2O3. Besides, AlN is the most unique underlayer as its lattice mismatch with h-BN is relatively small (<0.7%) and they can even fully match around 1150 K, which means it can be used as a buffer layer for thick h-BN (>100 nm) growth. Moreover, large area of two-dimensional thin h-BN (5-15 nm) layer can be obtained on GaN, 6H-SiC, Si(1 1 1) or α-Al2O3 except for graphene. On the other hand, calculation indicates that large area of graphene can be grown on h-BN.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 467, 1 June 2017, Pages 126-131
Journal: Journal of Crystal Growth - Volume 467, 1 June 2017, Pages 126-131
نویسندگان
Jiadong Yu, Lai Wang, Zhibiao Hao, Yi Luo, Changzheng Sun, Yanjun Han, Bing Xiong, Jian Wang, Hongtao Li,