کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489577 | 1524361 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Solution growth of Si on reorganized porous Si foils and on glass substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have developed a thin film growth process, which allows for the deposition of closed layers of crystalline Si onto inexpensive substrates in a continuous fashion. Deposition is performed by steady-state solution growth on either reorganized porous Si foils, or on glass substrates with a thin amorphous Si seed layer. The respective monocrystalline and polycrystalline Si films are grown up to a thickness of several ten micrometers, making them suitable for an efficient absorption of sunlight in a photovoltaic device. The structural properties of the Si films have been investigated by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The determined real structure of the polycrystalline layers with grains in the dimension of several 10 µm offers good prospects to utilize the material as an absorber layer for solar cells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 468, 15 June 2017, Pages 268-271
Journal: Journal of Crystal Growth - Volume 468, 15 June 2017, Pages 268-271
نویسندگان
C. Ehlers, R. Bansen, T. Markurt, D. Uebel, Th. Teubner, T. Boeck,