کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489613 | 1524361 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Determination of partial dislocations of stacking fault in (111) single crystal diamond grown on (111) seed crystal by synchrotron X-ray topography
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Stacking faults (SFs) in a (111) single crystal diamond grown on a (111) seed crystal were investigated by taking synchrotron X-ray topography images with various diffraction vector g conditions. We found that the SFs on the {111} plane of fault vector f were a/3[111Ì
], a/3[1Ì
11], and a/3[11Ì
1]. Subsequently, we analyzed these images in terms of the b·g extinction criteria and determined that the partial dislocations of the SFs were Shockley partial dislocations with Burgers vector b = a/6 <211>. Then, we determined that the SFs are Shockley type faults. Therefore, we propose that these SFs were generated by decomposition of one perfect dislocation with b = a/2<1¯10>.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 468, 15 June 2017, Pages 439-442
Journal: Journal of Crystal Growth - Volume 468, 15 June 2017, Pages 439-442
نویسندگان
Satoshi Masuya, Kenji Hanada, Tomoya Moribayashi, Hitoshi Sumiya, Makoto Kasu,