کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489640 | 1524370 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Reduction of threading dislocation density for AlN epilayer via a highly compressive-stressed buffer layer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Crystalline qualities of three AlN films grown by cold-wall high temperature hydride vapor phase epitaxy (CW-HT-HVPE) on c-plane sapphire substrates, with different AlN buffer layers (BLs) deposited either by CW-HT-HVPE or by hot-wall low temperature hydride vapor phase epitaxy (HW-LT-HVPE), have been studied. The best film quality was obtained on a 500-nm-thick AlN BL grown by HW-LT-HVPE at 1000Â â. In this caseï¼the AlN epilayer has the lowest full-width at half-maximum (FWHM) values of the (0002) and (10-12) x-ray rocking curve peaks of 295 and 306 arcsec, respectively, corresponding to the screw and edge threading dislocation (TD) densities of 1.9Ã108Â cmâ2 and 5.2Ã108Â cmâ2. This improvement in crystal quality of the AlN film can be attributed to the high compressive-stress of BL grown by HW-LT-HVPEï¼which facilitate the inclination and annihilation of TDs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 459, 1 February 2017, Pages 159-162
Journal: Journal of Crystal Growth - Volume 459, 1 February 2017, Pages 159-162
نویسندگان
Jun Huang, Mu Tong Niu, Ji Cai Zhang, Wei Wang, Jian Feng wang, Ke Xu,