Keywords: A1 جابجایی; A1. Dislocation; A1: Defect; A1: Directional solidification; B2. Silicon;
مقالات ISI A1 جابجایی (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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Keywords: A1 جابجایی; A1. Computer simulation; A1. Dislocation; A2. Growth from melt; B1. Silicon
Keywords: A1 جابجایی; A1. Directional solidification; A1. Dislocation; A1. Nucleation; B1. Silicon;
Keywords: A1 جابجایی; A1. Directional solidification; A1. Nucleation; A1. Dislocation; B1. Silicon; B1 Fused quartz particle; B3. Solar cells;
Keywords: A1 جابجایی; A1. Dislocation; A1. Defect; A1. Directional solidification; B1. Silicon
Keywords: A1 جابجایی; A1. X-ray topography; A1. Dislocation; A2. Growth from solutions; B1. Aromatic crystal; B1. Trans-stilbene; B2. Organic scintillator
Keywords: A1 جابجایی; A1. Directional solidification; A1. Dislocation; A2. Seed-assisted; A3. Uniform grain sizes;
Keywords: A1 جابجایی; A1. Dislocation; A1. Numerical simulation; A1. Stress; A2. Directional solidification; A2. Cooling process;
Reduction of threading dislocation density for AlN epilayer via a highly compressive-stressed buffer layer
Keywords: A1 جابجایی; B1. AlN; A3. Hydride vapor phase epitaxy; A1. Dislocation; A1. Stress; A1. TEM;
Growth and characterization of AlGaN/AlN/GaN/AlGaN double heterojunction structures with AlGaN as buffer layers
Keywords: A1 جابجایی; A1. 2DEG; A1. Dislocation; A1. Mobility; A3. MOCVD; B1. Nitrides; B3. HEMTs;
Control of threading dislocation density at the initial growth stage of AlN on c-sapphire in plasma-assisted MBE
Keywords: A1 جابجایی; A1. Dislocation; A3. Molecular beam epitaxy; A3. Migration enhanced epitaxy; B2. Semiconducting aluminium compounds
Defect reduction processes in heteroepitaxial non-polar a-plane GaN films
Keywords: A1 جابجایی; A1. Basal stacking fault; A1. Dislocation; A1. TEM; A3. MOVPE; B1. Non-polar GaN
Dissolution kinetics at edge dislocation site of (1Â 1Â 1) surface of copper crystals
Keywords: A1 جابجایی; A1. Surface step; A1. Nucleation; A1. Dislocation; A1. Etching; A2. Electrodissolution; B1. Copper;
Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed
Keywords: A1 جابجایی; A1. Defects; A1. Dislocation; A2. Growth from melt; B2. Semiconducting Silicon; B3. Solar cells
The effects of annealing on non-polar (1 1 2¯ 0) a-plane GaN films
Keywords: A1 جابجایی; B1. Non-polar GaN; A1. Dislocation; A1. Basal stacking fault; A1. TEM; A3. MOVPE
Dislocation reduction in CdTe/Si by molecular beam epitaxy through in-situ annealing
Keywords: A1 جابجایی; 68.55.âa; 81.05.Dz; 81.15.Hi; A1. Dislocation; A3. Molecular beam epitaxy; B1. CdTe; B1. HgCdTe; B1. Si; B2. Etched pit density; B3. Annealing;
Cathodoluminescence mapping and selective etching of defects in bulk GaN
Keywords: A1 جابجایی; 61.72.Hh; 78.60.Hk; 78.66.FdA1. Cathodoluminescence; A1. Dislocation; A1. Selective etching; B1. Gallium nitride
Microstructure of La0.7Sr0.3MnO3/Ba0.7Sr0.3TiO3/La0.7Sr0.3MnO3 epitaxial films grown on (0Â 0Â 1) SrTiO3 substrate
Keywords: A1 جابجایی; 68.37.Lp; 77.84.Bw; 81.15.Fg; A1. Transmission electron microscopy; A1. Dislocation; A3. Laser epitaxy; B1. Perovskites; B2. Ferroelectric materials; B2. Magnetic materials;
Heavily doped silicon crystals: neckless growth and robust wafers
Keywords: A1 جابجایی; 81.05.Cy; 61.72.Hh; 61.72.Lk; A1. Dislocation; A1. Heavy B doping; A1. Heavy B and Ge codoping; A1. Misfit dislocation; A1. Thermal stress; B2. Si crystal and wafer;