کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9830148 | 1524504 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Heavily doped silicon crystals: neckless growth and robust wafers
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Some interesting phenomena relating to dislocation behavior occurring near the seed/grown-crystal interface during the growth of heavily B-doped Si crystals have been observed, which have not been reported in the literature. The generation and/or propagation of dislocations have been shown to be suppressed remarkably due to an impurity hardening effect in heavily B-doped or heavily B- and Ge-codoped Si crystals. As a result, in the heavily B-doped or B- and Ge-codoped Si crystals, dislocations did not multiply in spite of the fact that some dislocations could not always be fully eliminated even after use of a severe thin neck process. Consequently, neckless growth of a dislocation-free Si crystal has been successfully achieved, based on this discovery. Furthermore, a new kind of so-called “robust Si wafer” has been proposed, which exhibits a high resistance to thermal stress and is suitable for any kind of epitaxial growth without the generation of misfit dislocations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 275, Issues 1â2, 15 February 2005, Pages 276-282
Journal: Journal of Crystal Growth - Volume 275, Issues 1â2, 15 February 2005, Pages 276-282
نویسندگان
Keigo Hoshikawa, Xinming Huang, Toshinori Taishi,