کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8151745 | 1524443 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Seed-assisted growth of high-quality multi-crystalline silicon in directional solidification
ترجمه فارسی عنوان
رشد دانه ای از سیلیکون کریستالیزه با کیفیت بالا در جهت انجماد جهت
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
چکیده انگلیسی
An approach to grain control using seed-assisted growth in directional solidification (DS) is reported in this paper. Proper multi-crystalline silicon seeds at the bottom of the crucible provided numerous fine nucleation points for the controlled grain growth in an optimized hot-zone. Low dislocation density was observed with large numbers of uniform small grains in the silicon ingot, although the grain size increased with crystal growth. Crystals produced using seed-assisted growth showed a higher and more uniform minority carrier lifetime with a much lower dislocation multiplication rate. A higher average solar cell conversion efficiency of about 0.5% in absolute value was obtained in the seed-assisted grown silicon in comparison with that in the seedless silicon under the same cell fabrication process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 386, 15 January 2014, Pages 52-56
Journal: Journal of Crystal Growth - Volume 386, 15 January 2014, Pages 52-56
نویسندگان
Didi Zhu, Liang Ming, Meiling Huang, Zhaoyu Zhang, Xinming Huang,