کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489927 | 1524377 | 2016 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study towards integration of In0.53Ga0.47As on 300Â mm Si for CMOS sub-7Â nm node: Development of thin graded InxGa1âxAs buffers on GaAs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
High-quality InxGa1âxAs layers with indium composition between 0.46 and 0.50 have been grown in a 300 mm industrial MOVPE reactor using â¤1 μm thin InxGa1âxAs buffers on 2â³ GaAs substrates. Aggressive grading of 3.7 to 3.8% misfit/μm, fast growth rates in the range of 0.2-2.2 nm/s and low growth temperatures of 530 °C and 450 °C were used. AFM reveals a significant difference in root mean square surface roughness of 3.6 nm (530 °C) versus 15.5 nm (450 °C). Cross-section TEM analysis shows that for both temperatures threading dislocations are effectively confined to the buffer region. However, at 450 °C phase separation is observed in the upper part of the structure. From plan-view TEM threading dislocation densities as low as 1Ã105 cmâ2 and 4.5Ã105 cmâ2 are estimated for growth at 530 °C and 450 °C, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 452, 15 October 2016, Pages 244-247
Journal: Journal of Crystal Growth - Volume 452, 15 October 2016, Pages 244-247
نویسندگان
Y. Mols, B. Kunert, G. Gaudin, R. Langer, M. Caymax,