Study of effects of size and Ga mole content of In1−xGaxAs/GaAs quantum ring on excitonic properties using the variational calculation

This work aims to calculate the energy spectrum of semiconductor In1−xGaxAs/GaAs Quantum Ring (QR) using a three-dimensional model. The latter is modeled by a truncated torus residing on a thin In1−xWLGaxWLAs wetting layer (WL). The main novelty of this work is to calculate electron and hole ground state energy using a variational method. The lattice-mismatch strain effect and the charge carrier confinement profile were considered in the calculation. For electron, the energy dependence of the effective mass was taken into account in solving the Schrödinger equation using the single band effective mass approximation. Moreover, variational estimate of the excitonic binding energy and the oscillator strength as a function of the QR radial width and Ga mole content were reported.