کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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5491864 | 1525132 | 2017 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Trace elements study of high purity nanocrystalline silicon carbide (3C-SiC) using k0-INAA method Trace elements study of high purity nanocrystalline silicon carbide (3C-SiC) using k0-INAA method](/preview/png/5491864.png)
Silicon carbide (3C-SiC) nanoparticles have been irradiated by neutron flux (2Ã1013 n·cm-2·s-1) at TRIGA Mark II type research reactor. After neutron irradiation, the radioisotopes of trace elements in the nanocrystalline 3C-SiC were studied as time functions. The identification of isotopes which significantly increased the activity of the samples as a result of neutron radiation was carried out. Nanocrystalline 3C-SiC are synthesized by standard laser technique and the purity of samples was determined by the k0-based Instrumental Neutron Activation Analysis (k0-INAA) method. Trace elements concentration in the 3C-SiC nanoparticles were determined by the radionuclides of appropriate elements. The trace element isotopes concentration have been calculated in percentage according to k0-INAA method.
Journal: Physica B: Condensed Matter - Volume 517, 15 July 2017, Pages 30-34