Transport properties of Y0.95Ca0.05MnO3/Si thin film junction

We have grown p-type Y0.95Ca0.05MnO3 (YCMO) film on n-type Si substrate using chemical solution deposition (CSD) technique. To understand the structural properties of the YCMO/Si junction, X-ray diffraction (XRD) technique was used while surface morphology was analyzed by atomic force microscopy (AFM) which indicates granular growth of the YCMO film. To understand the transport properties across the junction, current-voltage (I-V) characteristics have been studied at different temperatures in the range from 150 to 300 K. Log I-V characteristics show a good rectifying behavior of the junction throughout the temperature range studied. Different models have been used to explore the conduction mechanism governing the charge transport across the junction. Effect of temperature on rectifying ratio and its correlations with I-V curves has been discussed in detail.