کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5492078 | 1525141 | 2017 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study of surface exfoliation on 6H-SiC induced by H2+ implantation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
The effect of lattice damage generated by the H2+-implantation on exfoliation efficiency in 6H-SiC wafers is investigated. <0001> 6H-SiC wafers were implanted with 134Â keVÂ H2+ ions to ion fluences from 1.5Ã1016 to 5Ã1016 H2+ cmâ2 and subsequently annealed at temperatures from 973Â K to 1373Â K. The samples were studied by a combination of optical microscopy and transmission electron microscopy. Only after 1373Â K annealing for 15Â min, blisters and exfoliation occur on the H2+-implanted sample surface. With increasing the implantation fluences from 1.5Ã1016 to 3.75Ã1016 H2+ cmâ2, the exfoliation mean size decreases, while the exfoliation density increases. For the highest fluence of 5Ã1016 H2+ cmâ2, seldom exfoliations occur on the sample surface. Microstructure analysis shows that exfoliation efficiency is largely controlled by the H2+-implantation-induced lattice damage. The depth of the microcrack is related to the implantation fluence. The effect of implantation fluence on dislocation loops, platelet nucleation and growth is investigated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 508, 1 March 2017, Pages 104-111
Journal: Physica B: Condensed Matter - Volume 508, 1 March 2017, Pages 104-111
نویسندگان
L. Zhang, B.S. Li,