کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
6456786 1420650 2017 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Improvement of the SRH bulk lifetime upon formation of n-type POLO junctions for 25% efficient Si solar cells
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی کاتالیزور
پیش نمایش صفحه اول مقاله
Improvement of the SRH bulk lifetime upon formation of n-type POLO junctions for 25% efficient Si solar cells
چکیده انگلیسی


- Improvement of bulk lifetime upon n-type POLO junction formation.
- Gettering of metal impurities by a combination of poly-Si and high P doping.
- Implementation into a solar cell process flow resulting in 25% efficient cells.

Carrier-selective contact schemes, like polysilicon on oxide (POLO), provide low contact resistivities while preserving an excellent passivation quality. These junctions offer an important additional feature compared to a-Si/c-Si heterojunctions. We find that the formation of n-type POLO junctions lead to a huge increase of the Shockley-Read-Hall (SRH) lifetime of the substrate, a prerequisite for highly efficient solar cells. The SRH lifetime improvement can be observed for both bulk polarities and for a variety of bulk resistivities. Thus we suggest that the highly doped POLO junction getters impurities that have more or less symmetric SRH capture cross sections. We are able to achieve SRH lifetimes of > 50 ms. By applying POLO junctions to interdigitated back contact cells, we achieve cells with an efficiency of 25%.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 173, December 2017, Pages 85-91
نویسندگان
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