Cu(In,Ga)Se2 thin film solar cells with solution processed silver nanowire composite window layers: Buffer/window junctions and their effects

- Silver nanowire (AgNW) composites window layers are employed to CIGS solar cells.
- CdS/AgNW-composite window interfacial defects could cause significant loss in FF.
- The value of NdDi2 has to be greater than ~4×10−6 cm to avoid loss in FF.
- Nd is approximately free electron concentration in a matrix layer embedding AgNWs.
- Di is the negatively charged defect density at the CdS/AgNW-composite interface

We quantitatively and analytically investigate the properties of buffer/window junctions and their effects on the energy band alignment and the current-voltage characteristics of Cu(In,Ga)Se2 (CIGS) thin film solar cells with solution processed silver nanowire (AgNW) composite window layers. AgNWs are generally embedded in a moderately conductive matrix layer to ensure lateral collection efficiency of charge carriers photogenerated in the lateral gaps present between AgNWs. Studies on the junctions between a buffer and AgNW-composite window layers and their effects on the performances of CIGS thin film solar cells have seldom been addressed. Here, we show that solution processed AgNW-composite window layers could induce defect states at the buffer/window interface, resulting in poor energy band alignment impeding carrier transport in the solar cells. On the basis of our analysis, we suggest an analytical expression of nmatrixDi2≥3.46×10−5ε cm to avoid losses in the power conversion efficiency of the solar cells. nmatrix is the carrier concentration in a matrix layer embedding AgNWs, Di is the negative defect density at the buffer/window interface, and ε is the relative dielectric constant of the matrix layer embedding AgNWs.

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