کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6457095 | 1420659 | 2017 | 4 صفحه PDF | دانلود رایگان |
- Absorption coefficient of AlGaInP alloys has been obtained down to 100Â cmâ1.
- Indirect and direct gap energies in AlGaInP were determined.
- Photocurrent measurements in PINs can be used to extract accurate absorption coefficients.
The absorption coefficient of AlGaInP lattice-matched to GaAs, across the composition range from AlInP to GaInP has been obtained from photocurrent versus wavelength measurements on seven homo-junction AlGaInP PIN diode structures. Due to the sensitivity of the photocurrent measurement technique, values of absorption down to 100Â cmâ1 have been determined close to the band-gap. From these, the bandgaps in this material system were extracted across the composition range and these corroborate data in the literature that shows the band-gap becoming indirect when the aluminium content, x>0.48.
Journal: Solar Energy Materials and Solar Cells - Volume 164, May 2017, Pages 28-31