A solution approach to p-type Cu2FeSnS4 thin-films and pn-junction solar cells: Role of electron selective materials on their performance

- SILAR films of p-type Cu2FeSnS4 (CFTS) introduced in pn-junction solar cells.
- A range of chalcogenides used as n-type compound semiconductors.
- Both components of the junctions were SILAR films formed under atmospheric condition.
- Band-edges of the semiconductors were located from density of states (DOS).
- Type-II band-alignment of the pn-junctions and energy conversion efficiency of the solar cells were correlated.

We present formation of Cu2FeSnS4 (CFTS) thin-films through successive ionic layer adsorption and reaction (SILAR) method. We have considered a range of chalcogenides as n-type compound semiconductors, also formed through SILAR method, in conjunction with the p-nature of CFTS to fabricate and characterize pn-junction solar cells. The film-deposition method, which is a low temperature and non-vacuum one and is also suitable for obtaining films of large-areas, has maintained a balance between fabrication cost and phase purity. From scanning tunneling spectroscopy and correspondingly density of states of the semiconductors, we have estimated their band-edges to draw energy-level diagram of the devices. This has led in establishing a correlation between the band-alignment in the pn-junctions and energy conversion efficiency of solar cells based on the junctions. The correlation has been further supported by diode parameters of the junctions. An energy conversion efficiency of 2.9% with promising reproducibility could be achieved in CFTS|Bi2S3 junctions formed through this room-temperature film deposition route.

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