کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6457433 | 1361708 | 2016 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: ITO/SiOx:H stacks for silicon heterojunction solar cells ITO/SiOx:H stacks for silicon heterojunction solar cells](/preview/png/6457433.png)
• Using ITO/SiOx:H stacks for improving optical response in silicon heterojunction solar cells.
• Improving conductivity of ITO by hydrogen treatment supplied from PECVD films.
• SHJ cells with ITO/SiOx:H stacks achieved 41.3 mA/cm2 generation current and 40.6 mA/cm2 short circuit current.
• Integration of ITO/SiOx:H stack with Cu plating.
A method of reducing optical losses in the transparent conductive oxides (TCO) used in silicon heterojunction solar cells without compromising with series resistance is described. In the method the thickness of a TCO is reduced two-three times and a hydrogenated dielectric is deposited on top to form a double layer antireflection coating. The conductivity of a thin TCO is increased due to the effect of hydrogen treatment supplied from the capping dielectric during the post deposition annealing. The optimized cells with ITO/SiOx:H stacks achieved more than 41 mA/cm2 generation current on 120-micron-thick wafers while having approximately 100 Ω/square sheet resistance. The paper also considers integration of ITO/SiOx:H stacks with Cu plating and using ITO/SiNx/SiOx triple layer antireflection coatings.
Journal: Solar Energy Materials and Solar Cells - Volume 158, Part 1, December 2016, Pages 98–101