کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6457523 | 1420664 | 2017 | 10 صفحه PDF | دانلود رایگان |
- Solid Se source is used to provide Se atmosphere for selenizing Cu/In/Ga precursors.
- Three-step reaction has been used to solve the common issue of Ga accumulation.
- Selenization without CuGaSe2 phase formation in the first step favors the Ga diffusion.
- Ga re-diffusion and significant grain growth happened during the second step.
The three-step H2Se/Ar/H2Se reaction of CuInGa precursors for preparing high-quality CuInGaSe2 thin films is extensively used to control their composition and adhesion. In this work, a non-toxic, low-cost, solid Se source is used instead of toxic H2Se gas to selenize electrodeposited Cu/In/Ga precursors by the three-step vapor Se/N2/vapor Se reaction. Experimental results reveal that the Se content of the film in the first selenization step importantly affects the Ga distribution. Incomplete selenization (0.74
Journal: Solar Energy Materials and Solar Cells - Volume 159, January 2017, Pages 352-361