A susceptor heating structure in MOVPE reactor by induction heating

• A novel susceptor with V-shaped slot in MOVPE reactor is proposed.
• Temperature in the substrate is optimized.
• Great temperature uniformity of the substrate is obtained.

A novel susceptor with a revolutionary V-shaped slot of solid of revolution form is proposed in the metalorganic vapor phase epitaxy (MOVPE) reactor by induction heating. This slot changes the heat transfer rate as the generated heat is transferred from the high temperature region of the susceptor to the substrate, which improves the uniformity of the substrate temperature distribution. By using finite element method (FEM), the susceptor with this structure for heating the substrate of six inches in diameter is optimized. It is observed that this optimized susceptor with the V-shaped slot makes the uniformity of the substrate temperature distribution improve more than 80%, which can be beneficial to the film growth.