کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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6471035 | 1424110 | 2017 | 9 صفحه PDF | دانلود رایگان |
A series of (U1âyGdy)O2 materials (y = 0, 0.01, 0.03, 0.05, 0.07 and 0.10) were characterized by X-ray diffractometry and Raman spectroscopy to determine the influence of GdIII doping on the structure of (U1âyGdy)O2 solid solutions. The XRD results show that, while the fluorite structure is maintained, Gd doping up to 10% leads to a contraction of the fluorite lattice. Raman spectroscopy shows GdIII doping distorts the fluorite lattice structure due to the formation of oxygen vacancies (Ov) and, possibly, MO8-type complexes, as a consequence of the differences in both the oxidation state and the ionic radius of Gd3+ compared to that of the U4+. The influence of Gd doping on the electrochemical reactivity of the (U1âyGdy)O2 specimens was shown to be minor, possibly due to a competition between the increase in the number of Ov and the contraction of the lattice.
Journal: Electrochimica Acta - Volume 247, 1 September 2017, Pages 496-504