کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6533785 | 1420636 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Open circuit voltage increase of GaSb/GaAs quantum ring solar cells under high hydrostatic pressure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Open circuit voltage increase of GaSb/GaAs quantum ring solar cells under high hydrostatic pressure Open circuit voltage increase of GaSb/GaAs quantum ring solar cells under high hydrostatic pressure](/preview/png/6533785.png)
چکیده انگلیسی
Hydrostatic pressure can be used as a powerful diagnostic tool to enable the study of lattice dynamics, defects, impurities and recombination processes in a variety of semiconductor materials and devices. Here we report on intermediate band GaAs solar cells containing GaSb quantum rings which exhibit a 15% increase in open-circuit voltage under application of 8 kbar hydrostatic pressure at room temperature. The pressure coefficients of the respective optical transitions for the GaSb quantum rings, the wetting layer and the GaAs bulk, were each measured to be ~â¯10.5â¯Â±â¯0.5â¯meV/kbar. A comparison of the pressure induced and temperature induced bandgap changes highlights the significance of the thermal energy of carriers in intermediate band solar cells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 187, 1 December 2018, Pages 227-232
Journal: Solar Energy Materials and Solar Cells - Volume 187, 1 December 2018, Pages 227-232
نویسندگان
D. Montesdeoca, P.J. Carrington, I.P. Marko, M.C. Wagener, S.J. Sweeney, A. Krier,