کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
6533896 1420638 2018 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Extreme radiation hard thin film CZTSSe solar cell
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی کاتالیزور
پیش نمایش صفحه اول مقاله
Extreme radiation hard thin film CZTSSe solar cell
چکیده انگلیسی
In this work, we have demonstrated the extreme radiation hardness of thin film CZTSSe solar cells. Thin film solar cells with CZTSSe, CZTS and CIGS absorber layers were irradiated with 3 MeV protons. No degradation in device parameters was observed until a displacement damage dose of 2 × 1010 MeV/g for CZTS and CZTSSe. CIGS solar cells degraded by 13% at the same dose. For the highest proton dose both the CZTSSe and CZTS degraded by 16% while CIGS suffered from 34% degradation in efficiency. The degradation in efficiency maybe attributed to the reduction in the minority carrier lifetime due to radiation induced lattice defects. Comparisons with previously available literature show that our CZTS technology has superior radiation hardness by about two orders of magnitude compared to existing state of the art Si and GaAs technology.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 185, October 2018, Pages 16-20
نویسندگان
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