کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6534023 | 1420638 | 2018 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
SiO2 surface passivation layers - a key technology for silicon solar cells
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
High-efficiency silicon solar cells strongly rely on an effective reduction of charge carrier recombination at their surfaces, i.e. surface passivation. Today's industrial silicon solar cells often utilize dielectric surface passivation layers such as SiNx and Al2O3. However, a passivation layer well-known from the microelectronic industry, SiO2, had and has a strong impact on silicon photovoltaics. It allowed to develop the first 20% efficient silicon solar cells in the past and currently experiences a renaissance as the interfacial oxide for silicon-based passivating contacts, thus enabling the next generation of silicon solar cells. This article reviews the properties of SiO2 passivation layers and their strong impact on the historical and current development of silicon solar cells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 185, October 2018, Pages 260-269
Journal: Solar Energy Materials and Solar Cells - Volume 185, October 2018, Pages 260-269
نویسندگان
Stefan W. Glunz, Frank Feldmann,