کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6534118 | 1420641 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Light and elevated temperature induced degradation in p-type and n-type cast-grown multicrystalline and mono-like silicon
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We compare light induced degradation behaviours in lifetime samples and fully fabricated solar cells made from p-type boron-doped high performance multicrystalline silicon, p-type boron-doped mono-like silicon, n-type phosphorus-doped high performance multicrystalline silicon and p-type boron-doped Czochralski-grown silicon. Our results confirm that the degradation in multicrystalline silicon is triggered by the rapid cooling after the firing process. All cast-grown silicon samples subjected to fast cooling show lifetime reduction after light soaking. Interestingly, the degradation rate in n-type multicrystalline silicon is found to be orders of magnitude slower than in p-type multicrystalline silicon, suggesting that the defect formation mechanism could be affected by the positions of the quasi fermi levels.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 182, 1 August 2018, Pages 98-104
Journal: Solar Energy Materials and Solar Cells - Volume 182, 1 August 2018, Pages 98-104
نویسندگان
Hang Cheong Sio, Haitao Wang, Quanzhi Wang, Chang Sun, Wei Chen, Hao Jin, Daniel Macdonald,