Analysis of grain structure evolution based on optical measurements of mc-Si wafers

The results confirm that the relative length of dark lines as a part of dislocation clusters in the upper brick part shows a locally linear correlation with the square root of a meaningful grain area measure in the lower brick part (Pearson coefficient R between 0.80 and 0.88). It also correlates with the inhomogeneity measures for grain area and shape (Pearson coefficient R about 0.88). As a result, changes in the crystallization process may be targeted according to the grain structure in the lower part of the brick. In the future, this method may serve to improve the prediction of solar cell results based on wafer-data.