کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6534797 | 49289 | 2016 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Remote plasma sputtering deposited Nb-doped TiO2 with remarkable transparent conductivity
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Nb-doped TiO2 (TNO) thin films with high electrical conductivity and excellent transparency were fabricated for the first time by reactive remote-plasma sputtering deposition. TNO films were deposited on non-alkali glass slides at room temperature, using a reactive remote plasma sputtering technology, followed by low-temperature annealing in ambient air. The as-deposited films were amorphous which were then crystallised into anatase nanocrystals after a short thermal exposure of 30 min at a moderate temperature of 280 °C. Such low temperature crystallisation induced remarkable enhancement of both conductivity and transparency, with the annealed samples demonstrating low resistivity of 6.4Ã10â4 Ω cm at room temperature and up to 87% optical transmittance. Fundamentally, the excellent transparent conductivity from the current work is attributed to the interplay between doping Nb to the Ti sub-lattice sites of the anatase phase and energetic/electronic effects due to formation of native defects. The achieved optical transparency and electrical conductivity for TNO are comparable to those for tin-doped indium oxide (ITO), thus demonstrating great potential in low-carbon processing of TNO to substitute the ITO that is based on the depleting and expensive indium resource.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 149, May 2016, Pages 310-319
Journal: Solar Energy Materials and Solar Cells - Volume 149, May 2016, Pages 310-319
نویسندگان
Liu Lu, Meilan Guo, S. Thornley, Xiaoping Han, Junhua Hu, M.J. Thwaites, Guosheng Shao,