کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6535023 | 49296 | 2015 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Tandem GaAsP/SiGe on Si solar cells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
GaAsP/SiGe dual-junction solar cells have been epitaxially grown on silicon substrates which have the potential of achieving 1-sun tandem efficiencies of 40%. With the addition of light trapping this lattice-matched two-terminal structure can be current-matched and facilitates high performance from the III-V top cell while maintaining the cost advantages of silicon solar cells. The SiGe graded buffer allows for lattice matching of the top and bottom cell while providing a low dislocation interface between the silicon substrate and the device layers. This two-terminal dual-junction structure design is presented and demonstrates a 10.4% relative improvement in JSC and a 1.7% absolute improvement in efficiency over previous best devices. These initial structures have reached an efficiency of 18.9% under 1-sun. The devices suffer from high series resistance and exhibit reduced fill factors. A near term pathway to efficiencies approaching 25% is described.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 143, December 2015, Pages 113-119
Journal: Solar Energy Materials and Solar Cells - Volume 143, December 2015, Pages 113-119
نویسندگان
Martin Diaz, Li Wang, Dun Li, Xin Zhao, Brianna Conrad, Anasasia Soeriyadi, Andrew Gerger, Anthony Lochtefeld, Chris Ebert, Robert Opila, Ivan Perez-Wurfl, Allen Barnett,