کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6535371 | 49300 | 2015 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhanced performance of ultra-thin Cu(In,Ga)Se2 solar cells deposited at low process temperature
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
To investigate the process temperature on the growth of ultra-thin (â¤500 nm) Cu(In,Ga)Se2 (CIGSe) absorbers and the corresponding performance of solar cells, the process temperature was set to 610 °C and 440 °C, respectively. It was found that the low process temperature (440 °C) could reduce the inter-diffusion of Ga-In and thus result in a higher back [Ga]/([Ga]+[In]) ([Ga]/[III]) grading than at the temperature of 610 °C. The higher back [Ga]/[III] grading at 440 °C was evidenced to both electrically and optically contribute to the efficiency enhancement of the solar cells in contrast to the lower back [Ga]/[III] grading at 610 °C. It was also implied that the high back [Ga]/[III] grading was beneficial to the collection of carriers generated from the back-reflected light.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 132, January 2015, Pages 142-147
Journal: Solar Energy Materials and Solar Cells - Volume 132, January 2015, Pages 142-147
نویسندگان
G. Yin, V. Brackmann, V. Hoffmann, M. Schmid,