Au/p-Si Schottky junction solar cell: Effect of barrier height modification by InP quantum dots

The Schottky barrier height of Au/p-Si has been modified in-situ by growing InP quantum dots on (100) p-Si by metal organic chemical vapor deposition technique. Under 1-sun AM 1.5, conversion efficiency is found 2.82% higher than that of a control cell where no nano-structuring is used to modify the barrier height.306