کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6535664 | 49301 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Advanced process for n-type mono-like silicon a-Si:H/c-Si heterojunction solar cells with 21.5% efficiency
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Advanced process for n-type mono-like silicon a-Si:H/c-Si heterojunction solar cells with 21.5% efficiency Advanced process for n-type mono-like silicon a-Si:H/c-Si heterojunction solar cells with 21.5% efficiency](/preview/png/6535664.png)
چکیده انگلیسی
In this work, n-type a-Si:H/c-Si heterojunction solar cells were fabricated using mono-like silicon wafers. First, cell efficiency distribution was investigated along a complete mono-like silicon ingot. Advanced electrical characterization was performed in order to understand limiting mechanisms of the final device performances. Fabricated heterojunction cells with the standard industrial compatible process have demonstrated efficiencies comparable to those with our Czochralski grown monocrystalline substrates: over 19% along a large part of the ingot. Moreover, the best wafers were evaluated using our advanced cells process. Very high efficiencies over 21.5% have been obtained, demonstrating the potential of such substrates for very high efficiency solar cells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 130, November 2014, Pages 690-695
Journal: Solar Energy Materials and Solar Cells - Volume 130, November 2014, Pages 690-695
نویسندگان
F. Jay, D. Muñoz, T. Desrues, E. Pihan, V. Amaral de Oliveira, N. Enjalbert, A. Jouini,