کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6535688 | 49311 | 2014 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Analysis of photovoltaic properties of Cu2ZnSn(S,Se)4-based solar cells
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Analyses of current-voltage characteristics of Cu2ZnSn(S,Se)4-based solar cells reveal a non-superposition between dark and illuminated curves. Numerical simulations have been carried out to model the behavior of the Cu2ZnSn(S,Se)4/CdS heterojunction, and to extract from experimental data the minority carrier diffusion length in the absorber. A small value of 200Â nm has been found, which induces collection losses in the absorber and is therefore a limiting factor to achieve high power conversion efficiencies. Additional experimental results, such as irradiance dependent photovoltaic properties and voltage dependent external quantum efficiency, are also presented and simulated with the same model. This confirms the validity of our approach and reveals interesting effects in Cu2ZnSn(S,Se)4-based solar cells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 126, July 2014, Pages 135-142
Journal: Solar Energy Materials and Solar Cells - Volume 126, July 2014, Pages 135-142
نویسندگان
Louis Grenet, Raphaël Fillon, Giovanni Altamura, Hélène Fournier, Fabrice Emieux, Pascal Faucherand, Simon Perraud,