ZnO:B back reflector with high haze and low absorption enhanced triple-junction thin film Si solar modules

We present our development of a ZnO:B back reflector (BR) with high haze and low absorption for highly efficient triple-junction thin film Si solar modules over a large area (1.1×1.3 m2). We try to maximize light trapping by the evaluation of the use of transparent conducting oxide (TCO) and BR for high efficiency. It was verified that the configuration of SnO2:F front TCO and ZnO:B BR shows better optical properties than typical configurations for light trapping due to its high transparency at the front and high haze at the back. In addition, we noticed that the absorption of the BR has a strong influence on the solar modules. We obtained a superior ZnO:B BR with high haze and low absorption by controlling the doping gas ratio (B2H6/DEZ). As the doping gas ratio of ZnO:B BR decreases, the haze increases due to a rougher surface morphology, and the absorption decreases due to reduced free carrier absorption. The solar modules with a ZnO:B BR in a lower doping gas ratio show relatively higher Pmax for the same i-μc-Si layer thickness. This results from an increased Isc due to higher haze and lower absorption. In addition, the ZnO:B BR with a low doping gas ratio was found to be effective in reducing the i-μc-Si layer thickness because there are more chances for trapping the light at the i-μc-Si layer. We could reduce the i-μc-Si layer thickness by about 28% for the equivalent Pmax level by lowering the doping gas ratio. We successfully applied the ZnO:B BR with high haze and low absorption into a triple-junction thin film silicon solar cell and achieved a new record, improving on our previous world record.