کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6535980 | 49321 | 2013 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The effect of thermal annealing of Mo film on the CuInSe2 layer texture and device performance
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The effect of thermal annealing of Mo film on the CuInSe2 layer texture and device performance The effect of thermal annealing of Mo film on the CuInSe2 layer texture and device performance](/preview/png/6535980.png)
چکیده انگلیسی
The influence of annealing treatment of molybdenum (Mo) film on the growth of CuInSe2 (CIS) thin film has been studied. We show that Mo film is with much better electrical conductivity and adhesion after being annealed in vacuum. It is found that annealing of Mo film not only modifies the orientation of In2Se3 (IS) precursor, but also the texture of CIS crystal. Thermally treated Mo film favors the growth of (220/204) oriented CIS film. CIS solar cell grown on annealed Mo film is found to be with higher device efficiency, which is attributed to the increased fill factor (FF).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 119, December 2013, Pages 190-195
Journal: Solar Energy Materials and Solar Cells - Volume 119, December 2013, Pages 190-195
نویسندگان
Jun Tong, Hai-Lin Luo, Zhu-An Xu, Hao Zeng, Xu-Dong Xiao, Chun-Lei Yang,